Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

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Abstract

We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers. © 2012 IEEE.

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Munzenrieder, N., Petti, L., Zysset, C., Salvatore, G. A., Kinkeldei, T., Perumal, C., … Troster, G. (2012). Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2012.6478982

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