Generation of ferroelectric domains in films using atomic force microscope

Abstract

Kinetics of domain formation in ferroelectric films subjected to electric field of atomic force microscope (AFM) is considered for a case of low reversal voltage. Dependence of equilibrium domain sizes on AFM and film parameters is defined. It is shown that formation of domains is possible if the applied voltage exceeds some threshold value. Above this threshold lateral sizes of the domains increase proportionally to the voltage. Dynamic equations of the domain wall motion during the domain formation in films are constructed and solved. For films having high activation fields the domain radius grows logarithmically with time. The time of the domain formation is defined. The calculated results are in agreement with experiments on lead zirconate titanate, lithium tantalate, and lithium niobate films. Kinetics of the domain growth in films with low activation fields is predicted. © 2005 American Institute of Physics.