Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals

Abstract

Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d-4f transitions of Ce3+ was observed at 380-650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am Α'-ray irradiation were ∼230 and ∼620 ph/5.5 MeV-α, respectively.