Effect of post annealing on MgO thin film prepared on silicon(001) substrate in high oxygen pressure and high substrate temperature by pulsed laser deposition

Abstract

Epitaxial growth of MgO was verified with the relation of MgO(100) parallel to Si(100) (cubic on cubic growth) even with a large mismatch of lattice constants ∼ 22%, instead of 9% mismatch in 45° rotation growth. MgO films prepared at higher deposition temperature showed (001) preferred orientation on Si(001) substrate. After post-annealing the MgO thin films, the pole figure of X-ray diffraction verified the epitaxial growth of cubic on cubic relation. Fe3Si thin film was deposited on Si(001) substrate with the MgO film as buffer layer. © 2011 Ceramic Society of Japan.