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Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application

  • Jena B
  • Pradhan Prasannajit K
  • Sahu P
  • et al.
Facta universitatis - series: Electronics and Energetics (2015) 28(4) 637-643
DOI: 10.2298/fuee1504637j
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Abstract

… work, the sensitivity of process parameters like channel length (Lg), channel thickness (tSi), and gate work … is used that takes into account the effect of the doping dependence, high-field …

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APA

Jena, B., Pradhan Prasannajit, K., Sahu, P., Dash, S., Mishra, G., & Mohapatra, S. (2015). Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application. Facta Universitatis - Series: Electronics and Energetics, 28(4), 637–643. https://doi.org/10.2298/fuee1504637j

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