Abstract
The 1.2 kV split-gate and split-source MOSFET with integrated JBS diode is fabricated. The two types of devices with different Schottky widths (1 µm and 2 µm) are designed and static characteristics are compared. Additionally, the short circuit capability of two types of devices is compared. The failure mechanism of devices is analyzed. The integrated Schottky diode leakage current at high temperature leads to the destruction of devices.
Author supplied keywords
Cite
CITATION STYLE
Xu, H., Lin, C., Ren, N., Gan, X., Liu, L., Zhu, Z., … Sheng, K. (2021). Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 (pp. 143–146). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/WiPDAAsia51810.2021.9656050
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
