Abstract
Chemical bath deposition (CBD) was used for the growth of Cd 1 - xZn x S thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of Cd1 - x Zn x S thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while Cd 1 - x Zn x S was used to replace CdS as the window layer in CdTe solar cells. © 2012 Caijuan Tian et al.
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CITATION STYLE
Tian, C., Gao, J., Li, W., Feng, L., Zhang, J., & Wu, L. (2012). Cd1 - X Zn x S thin films with low zn content prepared by chemical bath deposition. International Journal of Photoenergy, 2012. https://doi.org/10.1155/2012/549382
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