Thin film passivation characteristics in OLED using in-situ passivation

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Abstract

In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying SiO 2 and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetration in a single layer film is ensured below 1×10 -2 g/m 2.day. This leads to the improvement of such degradation characteristics in the application of multilayer films. © 2012 KIEEME. All rights reserved.

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Kim, K. D., Shin, H. K., & Chang, S. M. (2012). Thin film passivation characteristics in OLED using in-situ passivation. Transactions on Electrical and Electronic Materials, 13(2), 93–97. https://doi.org/10.4313/TEEM.2012.13.2.93

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