High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Abstract

Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF6 plasmas. Etch rates were studied as a function of substrate bias voltage (-3 to -500 V), ICP coil power (500-900 W), and chamber pressure (1-6 mT). The highest etch rate (970 nm/min) for SiC yet reported was achieved. Anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained. The addition of O2 to the SF6 plasma was found to slightly increase the etch rate. © 1999 American Institute of Physics.