New direct spectroscopic method for determination of bias-dependent electronic states: Hard X-ray photoelectron spectroscopy under device operation

Abstract

A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2/SiO2/Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact. © 2013 The Japan Society of Applied Physics.