Abstract
We calculated the electronic structure of (ZnO)1-x(InN)x, (=ZION), which belongs to a novel category of hybrid (II-VI)1-x(III-V)x alloys, by the interacting quasi-band theory aided by the sp3 tight-binding model of the wurzite structure. The tight-binding parameters of the irregular bonds (Zn-N and In-O) were estimated by iterating the relevant normal bonds and the absolute atomic levels were corrected by the electron affinities of ZnO and InN. We thus obtained the quasi-band structure of ZION at various concentrations. Across the entire range of concentrations, ZION exhibited a direct energy gap at Γ, and the band-gap energy continuously changes from 0.7 to 3.3 eV with a large band-gap bowing. A particularly, large shift was observed around x = 0.5. The obtained theoretical results imply that ZION (x = 0.1-0.3) is a suitable material for visible-light devices.
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CITATION STYLE
Furuki, R., Oda, M., & Shinozuka, Y. (2019). Electronic structure of (ZnO)1-x(InN)x alloys calculated by interacting quasi-band theory. Japanese Journal of Applied Physics, 58(2). https://doi.org/10.7567/1347-4065/aaf56f
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