Extraordinary optical gain from silicon implanted with erbium

Abstract

Here we report on measurements of optical gain at 1.5 μm in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly greater than previously supposed. We have measured a lower limit for the optical cross section for Er3+ of 5× 10-19 cm2, 30 times higher than previously anticipated. Given these higher values, this system now offers a realistic route to the production of electrically pumped silicon optical amplifier and laser devices using standard silicon process technology. © 2007 American Institute of Physics.