The Analysis and Research of the Integrated, 30 A MOSFET Gate Driver Dedicated to High-Frequency Applications

Abstract

This paper presents basic properties and laboratory tests of a commercial integrated high-frequency MOSFET gate driver IXRFD631 operating in the frequency range up to 30 MHz. The MOSFET driver has been tested for two operating states: in the idle state (no load) and at the gate load of a DE275-501N16A series MOSFET transistors. The obtained laboratory results were compared with three other commercial integrated drivers: DEIC420, DEIC515 and IXRFD630 (which are the base structures), and two previous solutions from the author (4xUCC27516 and 8xUCC27526). Additionally, this paper presents the characteristics of power losses and efficiency, measurements of switching and propagation times of the tested gate drivers. Also, this paper presents the output voltage waveforms of the integrated driver IXRFD631 for two operating states. The integrated circuit IXRFD631 of the gate driver is characterized by an efficiency of up to 70% for the tested frequency range, the power losses for two operating states (at idle state—15 W, at gate MOSFET load—43 W) and switching times of 2 ns for an operating frequency of 30 MHz.