Slow light in semiconductor heterostructures

51Citations
Citations of this article
29Readers
Mendeley users who have this article in their library.

Abstract

This paper presents an overview of slow light in semiconductor heterostructures. The focus of this paper is to provide a unified framework to summarize and compare various physical mechanisms of slow light proposed and demonstrated in the past few years. We expand and generalize the discussions on fundamental limitation of slow light and the delay-bandwidth product trade-off to include gain systems and other mechanisms such as injection locking. We derive the maximum fractional delay and compare the differences between material dispersion and waveguide dispersion based devices. The delay-bandwidth product is proportional to the square root of the device length for a material dispersion based device but has a linear relationship for a waveguide dispersion based device. Possible scenarios to overcome the delay-bandwidth product limitation are discussed. The prospects of slow light in various applications are also investigated. © 2007 IOP Publishing Ltd.

Cite

CITATION STYLE

APA

Ku, P. C., Chang-Hasnain, C. J., & Chuang, S. L. (2007, March 7). Slow light in semiconductor heterostructures. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/40/5/R01

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free