Abstract
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics. © 2014 Macmillan Publishers Limited.
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CITATION STYLE
Zhou, Y., Han, S. T., Chen, X., Wang, F., Tang, Y. B., & Roy, V. A. L. (2014). An upconverted photonic nonvolatile memory. Nature Communications, 5. https://doi.org/10.1038/ncomms5720
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