Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

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Abstract

Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption. © 2008 American Institute of Physics.

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Takenobu, T., Watanabe, K., Yomogida, Y., Shimotani, H., & Iwasa, Y. (2008). Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors. Applied Physics Letters, 93(7). https://doi.org/10.1063/1.2969772

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