Transverse Inscription of Silicon Waveguides by Picosecond Laser Pulses

Abstract

In this work, picosecond laser inscription of segmented waveguides in crystalline silicon based on a deterministic single-pulse modification process is demonstrated. Pulses of 43 ps duration at 1.55 (Formula presented.) wavelength are used to transversely inscribe periodic structures with a pulse-to-pulse pitch of ≈2 (Formula presented.). Infrared shadowgraphy images and Raman spectroscopy measurements indicate that the modifications exhibit a spherical shape. Characterization of waveguide performance at 1.55 (Formula presented.) for various pulse energies and periods is carried out. Direct comparison with numerical simulations confirms the presence of graded index waveguides, encompassing a micrometer core size and a maximum refractive index change of (Formula presented.). This short-pulse inscription approach can pave the way for 3D integrated photonic devices in the bulk of silicon.