Robust memristor networks for neuromorphic computation applications

Abstract

One of the main obstacles for memristors to become commonly used in electrical engineering and in the field of artificial intelligence is the unreliability of physical implementations. A non-uniform range of resistance, low mass-production yield and high fault probability during operation are disadvantages of the current memristor technologies. In this article, the authors offer a solution for these problems with a circuit design, which consists of many memristors with a high operational variance that can form a more robust single memristor. The proposition is confirmed by physical device measurements, by gaining similar results as in previous simulations. These results can lead to more stable devices, which are a necessity for neuromorphic computation, artificial intelligence and neural network applications.