Carrier recombination rates in narrow-gap (formula presented)-based superlattices

Abstract

We present a comparison of theoretical calculations and experimental measurements of the Auger recombination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations and measurements indicate that the rate depends on density as (Formula presented) for low density, and changes to an (Formula presented) dependence when the electrons and holes become degenerate. The calculations are the first to incorporate superlattice umklapp processes, which contribute about half of the total rate and substantially improve the agreement with experiment. © 1999 The American Physical Society.