Electric double layer gate field-effect transistors based on Si

Abstract

Electric double layer field-effect transistors (EDL-FETs) were fabricated using single crystal Si wafer as the active semiconductor and various characteristics were studied including dynamic response against step-function gate bias. The static FET mobility was more than 100 cm2 V -1 s-1. The response time of the drain current was 20 ms for ionic liquid and 3ms for poly(ethylene glycol) (PEG) solution of LiBF4. Unexpected fast response was observed at a certain "speed up bias" condition. This effect will be useful to switching circuits using EDL-FETs. © 2010 The Japan Society of Applied Physics.