Bismuth and thermal induced electrical conductivity of high temperature thermoelectric SrTi1-xBixO3 system

Abstract

Energy demand is increasing significantly, while conventional energy resources. Carried out by developing and exploring materials which are potentially applied as an alternative renewable energy device. Nowadays, the utilization of thermal energy attracts the research interest due to its abundant quantities. Thus, thermoelectric as a thermal conversion device into electrical energy is the best alternative for confronting this matter. Thermoelectric studies continue to be encouraged, one of them is SrTiO3 based material. For investigating the scientific information and its application, a comprehensive study was needed by modifying the local structure using Bi dopant on SrTi1-xBixO3 system. SrTi1-xBixO3 was prepared via solid-state reaction followed by calcination, molding process, and sintering at 860 °C. In this work, the various molar ratio of Bi doping was performed. Substitution of Bi in Ti position of SrTiO3 was intended to find its potential as a high-temperature thermoelectric material. XRD identified cubic crystal structure of SrTi1-xBixO3 with a space group of P m -3 m. Cell dimensions different for all fractions, the biggest one was performed by x = 0.10. Electrical conductivity of samples induced by thermal condition relatively increase as the fractions larger. The linear fit of UV-Vis Spectrophotometer data confirmed that SrTi1-xBixO3 was classified as semiconductor material with a wide bandgap which is potentially applied for the thermoelectric device.