Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

Nakabayashi, Y., Saitoh, M., Ishihara, T., Numata, T., Uchida, K., & Koga, J. (2015). Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance. Japan Society of Applied Physics. https://doi.org/10.7567/ssdm.2010.c-5-3