Effect of magnesium and silicon on the lateral overgrowth of GaN patterned substrates by metal organic vapor phase epitaxy

Abstract

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 μm diameter circles separated by 5 μm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {11̄01} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {11̄00} facets and (0001) top facet were obtained for a high SiH 4 flow rate in the vapor phase. We found that the GaN growth rates VR and Vc, measured in the R 〈11̄01〉 and C 〈0001〉 directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the VR/ YC ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20μm-high Si-doped GaN columns were obtained.