Engineering Co/MgO interface with heavy metals for voltage-controlled magnetic anisotropy effect

Abstract

We have investigated the voltage-controlled magnetic anisotropy (VCMA) effect in Co/MgO junctions by inserting a sub-atomic layer of heavy metals at the interface. We evaluated an electrical control of the magnetic anisotropy by using a micro-magneto-optical Kerr effect magnetometer. The VCMA coefficient of the Co/MgO junctions increases with the insertion of an Ir or Pt layer and decreases with the insertion of an Os layer. These results imply that the VCMA coefficient can be engineered by doping heavy metals at the interface. The interface engineering using a heavy metal layer provides us with a method to control the VCMA coefficient over a wide range.