Fabrication of high sensitivity and fast response IR photodetector based on VO2 nanocrystalline thin films prepared on the silicon substrate

Abstract

On Si substrates, vanadium dioxide nanocrystalline thin films (VO2 NC-TH) were prepared using the radio frequency magnetron sputtering (RF) method. The very small particles reference film was a very thin surface that appeared smooth like a coated Si wafer with the same spherical particle prominent and irregularly distributed in a thin film, according to XRD patterns with narrow peaks intensity and field emission scanning electron microscopy (FESEM) images. The current-voltage characteristic of metal-semiconductor-metal (M-S-M) VO2 NC-TH infrared photodetectors (IR-PD) in the dark and irradiated with 850 nm light and intensity was (0.17) mW/cm2. IR-PD exhibits 603, 3567, 10081, and 17751 sensitivity at 2, 3, 4, and 5 bise voltage, with increasing bias voltage increasing quantum efficiency, responsivity, and detectivity. The responsitivity and detectivity under 2, 3, 4, and 5 V bias are (0.24, 1.58, 7.92, and 14.76) A/W and (0.176, 1.03, 3.81 and 6.98) x 1012 Jones, respectively.