Synthesis and analysis of zirconium titanate thin films by using sol-gel method

Abstract

Titanium-doped zirconium oxide (mixed high-k) has been used as the gate oxide layer for the future generation metal oxide semiconductor devices. This mixed high-k layer was prepared by using Sol-Gel based spin-coated method. This mixed high-k layer’s chemical, structural, and initial electrical properties are investigated thoroughly. It is clearly confirmed that the suitable chemical composition and bond formation of the proposed mixed high-k layer from EDAX and FTIR analysis observations. The XRD spectra strengthened the presence of ZrTiO2. The measured dielectric constant of the proposed mixed high-k layer from the extracted C-V plots has been varying from 29.1 to 37.6 with respect to spin coating from 4000 to 6000 rpm. With lower spin rates, the leakage current is less.