Influence of Si–In–Zn–O/Ag/Si–In–Zn–O Electrode on Amorphous Si–Zn–Sn–O Thin Film Transistors

Abstract

Amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) have been reported with transparent Si–In–Zn–O/Ag/Si–In–Zn–O (SIZO OMO) source/drain (S/D) electrodes. The characteristics of ITO and SIZO OMO electrodes were compared with conventional metal electrode of Ti/Al. The SZTO TFT with SIZO OMO electrode showed high field effect mobility of 17.69 cm2/Vs, threshold voltage of 4.05 V and low sub-threshold swing of 0.33 V/decade. The stability of a-SZTO TFTs with SIZO OMO electrode was measured ∆VTH = 1.4 V at 333 K, and − 20 V for 7200 s under negative bias temperature stress (NBTS).