Influence of flexoelectricity on the spin cycloid in (110)-oriented BiFe O3 films

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Abstract

The influence of film orientation, strain relaxation, and flexoelectric fields on the stability of the spin cycloid in (110)-oriented BiFeO3 epitaxial films grown on LaAlO3 substrates is investigated. By means of advanced x-ray-diffraction techniques, we show that thinner films have very large strain gradients which give rise to high flexoelectric fields. Using low-energy Raman spectroscopy and conversion electron Mössbauer spectroscopy (CEMS) we show that films up to 53 nm thick possess collinear antiferromagnetic order, with no cycloidal modulation. This suppression of the cycloid is proposed to be from strain and strain-gradient-induced flexoelectric fields. On the other hand, films thicker than 90 nm show a complex spin texture consistent with two separate cycloids, likely with different propagation directions. Interestingly, CEMS analysis suggests that the two cycloids have the same spin rotation plane. The multiple cycloids are suggested to arise from different ferroelastic domains (in turn influenced by twinning in the substrate) with different strain relaxation behaviors. These results offer insight into the factors that influence cycloid stability in the less common (110) film orientation and have implications for future magnonic devices.

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APA

Sando, D., Appert, F., Burns, S. R., Zhang, Q., Gallais, Y., Sacuto, A., … Nagarajan, V. (2019). Influence of flexoelectricity on the spin cycloid in (110)-oriented BiFe O3 films. Physical Review Materials, 3(10). https://doi.org/10.1103/PhysRevMaterials.3.104404

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