Abstract
A technique for growing single crystals of α-HgS from Hg-rich solutions was developed. The optimal maximum temperature and cooling rate for obtaining large, non-strained single crystals was determined. It was found that Ge, Se, Te, HgSe, HgTe and ZnTe impurities are not able to bring the β-HgS → α-HgS phase transition down to the room temperature. © 1969.
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CITATION STYLE
APA
Cruceanu, E., & Nistor, N. (1969). Crystal growth of HgS from Hg-rich solutions. Journal of Crystal Growth, 5(3), 206. https://doi.org/10.1016/0022-0248(69)90009-8
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