Abstract
High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C.
Cite
CITATION STYLE
Chin, A., Wu, Y. H., Chen, S. B., Liao, C. C., & Chen, W. J. (2002). High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å (pp. 16–17). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/vlsit.2000.852751
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