Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band k·p method

Abstract

The effect of annealing on the photoluminescence (PL) in GaAsSbNGaAs quantum wells (QWs) grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650-750°C, respectively. Low-temperature (4 K) PL peaks shift to higher energies with the annealing temperatures. An As-Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k·p method. The estimated interdiffusion constants D are ∼ 10-17 - 10-16 cm2 s in the above temperature range and an activation energy of 1±0.4 eV is obtained. © 2005 American Institute of Physics.