Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films

Abstract

Nanoporous GaN thin films with honeycomb structure were fabricated via ultra-violet assisted electrochemical etching approach. Under different anodization voltages, two nanoporous samples with different porosity were fabricated. Porosity and surface phonon polariton (SPP) characteristics of the fabricated samples were investigated using polarized infrared attenuated total reflection technique. It was found that the porosity of nanoporous GaN has great influence on its SPP resonant frequency. It can modulate the resonance frequency towards lower value. © 2013 American Institute of Physics.