Diffusion Coefficient of Hydrogen in Palladium Films Prepared by RF Sputtering

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Abstract

Diffusion coefficients of hydrogen in the palladium films of α-phase have been measured between 278 and 323 K by an electrochemical stripping method. Palladium films were deposited on iron by RF sputtering. The values of the diffusion coefficient of hydrogen obtained for the film specimens 0.68 μm and 1.36mu;m in thickness were about 2 orders of magnitude lower than those reported for the bulk specimens in the literature, and the temperature dependence of the diffusion coefficients of hydrogen was given by DH(m2/s) = 4.16x 10-9 exp (-25.7 (kJ/mol)/RT). © 1990, The Japan Institute of Metals. All rights reserved.

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Hagi, H. (1990). Diffusion Coefficient of Hydrogen in Palladium Films Prepared by RF Sputtering. Materials Transactions, JIM, 31(11), 954–958. https://doi.org/10.2320/matertrans1989.31.954

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