InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies

Abstract

The growth behavior and luminescence properties of InGaN/GaN quantum wells (QW) on in situ self-organized GaN islands of various distinct smooth sidewall faceting are simultaneously investigated and directly compared. The QW thickness is found to be specific polar angle dependent, leading to variations in QW thickness on multifaceting islands. As a result, by color tuning through island shaping and modifications of the InGaN/GaN QWs on the faceted islands, polychromatic emissions are achieved. © 2011 American Institute of Physics.