Abstract
Fully transparent amorphous-InGaZnO thin-film transistors (TFTs) with double-gate (DG) configuration were fabricated. Both top-gate and bottom-gate (BG) TFT fabricated with a single gate-stack structure were found to exhibit sound device characteristics with μsat of 17.0 and 18.1 cm2 V−1 s−1, respectively. Confirmed benefits of DG configuration include improved current drivability and threshold voltage tunability. Further, controlling the fixed voltage bias to the BG was observed to enhance device stability under negative-bias-illumination-stress conditions.
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CITATION STYLE
Jeon, D.-B., Ryu, M.-K., Byun, C.-W., Yang, J.-H., Hwang, C.-S., & Yoon, S.-M. (2015). Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 33(2). https://doi.org/10.1116/1.4906570
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