An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofilms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density (<10 -7 A cm-2). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CITATION STYLE
Osada, M., Takanashi, G., Li, B. W., Akatsuka, K., Ebina, Y., Ono, K., … Sasaki, T. (2011). Controlled polarizability of one-nanometer-thick oxide nanosheets for tailored, high-κ nanodielectrics. Advanced Functional Materials, 21(18), 3482–3487. https://doi.org/10.1002/adfm.201100580
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