Dielectric constant enhancement due to Si incorporation into HfO 2

Abstract

The authors investigated the dielectric constant change of Hf(1-x) Six O2 film as functions of Si concentration and annealing temperature. As a result, the dielectric constant of Hf(1-x) Six O2 was increased when doped with a small amount of Si after 800 °C annealing. The authors revealed that the dielectric constant enhancement of Hf(1-x) Six O2 films is related to the phase transformation from the monoclinic to the tetragonal phase of Hf O2. By using the Clausius-Mossotti relation, it is concluded that the dielectric constant enhancement through the structural phase transformation is derived from the molar volume shrinkage rather than the molar polarizability increase. © 2006 American Institute of Physics.