Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

Abstract

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acousticwave and electronic subsystemis developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.