Threshold reduction of 1.3 µm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth

Abstract

A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3µm GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 µmø device was reduced to 2.2 mA at 77 K under CW conditions. © 1993, The Institution of Electrical Engineers. All rights reserved.