Abstract
Rutile-phase TiO2 thin films have been epitaxially grown on GaAs(100) substrates at 700 °C under 5 Pa oxygen ambient pressure, and at room temperature (30 °C) and 5×10−4 Pa base vacuum by KrF pulsed excimer laser deposition. The [110]-oriented TiO2 films were composed of two types of domains perpendicular to each other in the plane. From atomic force microscopy analysis, the epitaxial films had a surface with roughness less than 7 nm in root-mean-square.
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CITATION STYLE
Liu, X., Chen, X. Y., Yin, J., Liu, Z. G., Liu, J. M., Yin, X. B., … Wang, M. (2001). Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(2), 391–393. https://doi.org/10.1116/1.1339017
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