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Time-resolved electroluminescence study of green light-emitting diode

Physica Status Solidi C: Conferences (2002) (1) 25-28
DOI: 10.1002/pssc.200390038
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Abstract

We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Kuroda, T., Horio, N., Taniguchi, K., Sato, H., Funaoka, C., & Tackeuchi, A. (2002). Time-resolved electroluminescence study of green light-emitting diode. In Physica Status Solidi C: Conferences (pp. 25–28). Wiley-VCH Verlag. https://doi.org/10.1002/pssc.200390038

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