Growth and characterization of epilayer of SiC on Si (111) substrate using single solid source MBE

Abstract

3C-SiC thin films have been grown by Molecular Beam Epitaxial (MBE) technique on a Si (111) substrate at 1050°C using a single solid source fullerene (C60). Fullerene molecules adsorb on the tissue like surface of substrate and then thermally decompose into amorphous carbon and produce 3C-SiC. The grown films were characterized by SEM/EDX, XRD, FTIR and Raman spectroscopy. XRD data confirmed the growth of thick, highly crystalline and epitaxial SiC. The grown film has amorphous surface but the inner core consists of nearly perfect crystalline lattice structure indicated by SEM. FTIR and Micro-Raman also confirmed the high crystalline growth of 3C-SiC . The method proves to be a milestone for low temperature and high crystalline growth of 3C-SiC. © Published under licence by IOP Publishing Ltd.