Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors

Abstract

In this letter, pronounced hysteresis loops were observed in single-walled carbon nanotube-based field-effect transistors (CNTFETs). The shift in threshold voltage was found to increase with increasing gate voltage sweep ranges. A significant enhancement in the charge storage stability over 14 days was obtained at room temperature after a two-stage hydrogen and air annealing process was applied to the CNTFETs. The passivation of interface traps by annealing in hydrogen and the removal of physisorption solvent molecules by annealing in air are suggested to be responsible for the improvement of the charge storage stability. © 2005 American Institute of Physics.