High-current operation of vertical-type organic transistor with preferentially oriented molecular film

Abstract

A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.