Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications

Abstract

Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique. Since the first demonstration of quantum-well and superlattice structures in the early 1970's, MBE has continuously played a pivotal role in the development of innovative key optoelectronic devices. The advances in real-time feedback growth control make the MBE technique suitable for the demanding manufacturing environment. This paper reviews the principle and status of MBE technology with emphasis on III-V compound semiconductors for optoelectronic applications. © 1997 IEEE.