Abstract
Indium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed. © Springer-Verlag 2011.
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CITATION STYLE
Fung, M. K., Sun, Y. C., Ng, A. M. C., Chen, X. Y., Wong, K. K., Djurišíc, A. B., & Chan, W. K. (2011). Indium tin oxide nanowires growth by dc sputtering. Applied Physics A: Materials Science and Processing, 104(4), 1075–1080. https://doi.org/10.1007/s00339-011-6372-6
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