Large Grain Copper Indium Diselenide Films

Abstract

Large grain thin films of copper indium diselenide with a preferred {112} orientation have been prepared by (i) the deposition of nearly stoichiometric films of copper and indium on suitable substrates using vacuum evaporation or electrodeposition, and (ii) the heat-treatment of Cu-In films in a hydrogen-selenium atmosphere at temperatures above 630~ The compositional, structural, and electrical properties of the films have been evaluated. In an alternate ap- proach, a copper film on a substrate was first converted into cuprous selenide, followed by the deposition of indium and selenization. The resulting CuInSe2 films have the same properties as those from the selenization of Cu-In films.