Hydrogen in semiconductors

Abstract

Hydrogen in crystalline semiconductors is of great interest because of its high diffusivity and strong chemical activity in such materials. In contrast to the proton motion in ionic materials which gives rise to an enhanced conductivity, hydrogen in electronic materials interact with structural disorders and chemical impurities to control the electronic flow. Hydrogen incorporation is done by plasma and direct ion beam hydrogenation methods, implantation technique and by a novel technique of damage free introduction. The most studied materials are silicon and gallium arsenide. This paper reviews the various features of hydrogenation studies in crystalline silicon and gallium arsenide and highlights results of hydrogenation studies on Pd/semiconductor devices.