Enhanced Raman scattering from individual semiconductor nanocones and nanowires

Abstract

We report strong enhancement (∼103) of the spontaneous Raman scattering from individual silicon nanowires and nanocones as compared with bulk Si. The observed enhancement is diameter (d), excitation wavelength (λlaser), and incident polarization state dependent, and is explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross section. The variation of the Raman enhancement with d, λlaser, and polarization is shown to be in good agreement with model calculations of scattering from an infinite dielectric cylinder. © 2006 The American Physical Society.