Discovery of Ternary Silicon Titanium Nitride with Spinel-Type Structure

Abstract

Here we report on the discovery of a ternary silicon titanium nitride with the general composition (Si1−x,Tix)3N4 with x = 0 < x < 1 and spinel-type crystal structure. The novel nitride is formed from an amorphous silicon titanium nitride (SiTiN) precursor under high-pressure/high-temperature conditions in a large volume high-pressure device. Under the conditions of 15–20 GPa and 1800–2000 °C, spinel-type γ-Si3N4 and rock salt-type c-TiN are formed. In addition, crystals of the discovered nano-sized ternary phase (Si1−x,Tix)3N4 embedded in γ-Si3N4 are identified. The ternary compound is formed due to kinetically-controlled synthesis conditions and is analyzed to exhibit the spinel-type structure with ca. 8 atom% of Ti. The Ti atoms occur in both Ti3+ and Ti4+ oxidation states and are located on the Si sites. The ternary nano-crystals have to be described as (Si,Ti)3N4 with N-vacancies resulting in the general composition (Si4+1−x Ti4+x-δTi3+δ)3N4-δ.